Filtry
Filtry
Dyskretne produkty półprzewodnikowe
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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2N7002BK,215 |
MOSFET N-CH 60V 350MA TO236AB
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Nexperia USA Inc.
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RE1C002UNTCL |
MOSFET N-CH 20V 200MA EMT3F
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Półprzewodnik Rohma
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SCT3030KLGC11 |
SICFET N-CH 1200V 72A TO247N
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Półprzewodnik Rohma
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IRFR7440TRPBF |
MOSFET N-CH 40V 90A DPAK
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Technologie Infineon
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SUD19P06-60-GE3 |
MOSFET P-CH 60V 18.3A TO252
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Vishay Siliconix
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SIR426DP-T1-GE3 |
MOSFET N-CH 40V 30A PPAK SO-8
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Vishay Siliconix
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NDT452AP |
MOSFET P-CH 30V 5A SOT-223-4
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ONSEM
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SIS434DN-T1-GE3 |
MOSFET N-CH 40V 35A PPAK 1212-8
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Vishay Siliconix
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SI7655ADN-T1-GE3 |
MOSFET P-CH 20V 40A PPAK1212-8S
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Vishay Siliconix
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SI4425DDY-T1-GE3 |
MOSFET P-CH 30V 19.7A 8SO
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Vishay Siliconix
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SI7149ADP-T1-GE3 |
MOSFET P-CH 30V 50A PPAK SO-8
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Vishay Siliconix
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SI2343DS-T1-E3 |
MOSFET P-CH 30V 3.1A SOT23-3
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Vishay Siliconix
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DMP6350S-7 |
MOSFET P-CH 60V 1.5A SOT23
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Diody wbudowane
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DMP3056LDM-7 |
MOSFET P-CH 30V 4.3A SOT-26
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Diody wbudowane
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NVR5198NLT1G |
MOSFET N-CH 60V 1.7A SOT23-3
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ONSEM
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SI2301BDS-T1-E3 |
MOSFET P-CH 20V 2.2A SOT23-3
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Vishay Siliconix
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SI1308EDL-T1-GE3 |
MOSFET N-CH 30V 1.4A SOT323
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Vishay Siliconix
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SI2304DDS-T1-GE3 |
MOSFET N-CH 30V 3.3A/3.6A SOT23
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Vishay Siliconix
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NTR4101PT1G |
MOSFET P-CH 20 V 1,8 A SOT23-3
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ONSEM
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Zmiany w systemie operacyjnym |
MOSFET N-CH 50V 200MA UMT3F
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Półprzewodnik Rohma
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2N7002-F |
MOSFET N-CH 60V 115MA SOT23-3
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Diody wbudowane
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JANTX1N6622US |
DIODE GEN PURP 660V 2A D-5A
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Technologia mikroczipu
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JANTX1N5623US |
DIODE GEN PURP 1KV 1A D-5A
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Technologia mikroczipu
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JANTX1N5420 |
DIODE GEN PURP 600V 3A B AXIAL
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Technologia mikroczipu
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JANTX1N5615US |
DIODE GEN PURP 200V 1A A SQ-MELF
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Technologia mikroczipu
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JANTX1N5417 |
DIODE GEN PURP 200V 3A AXIAL
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Technologia mikroczipu
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JANTX1N6642US |
DIODE GEN PURP 75V 300MA D-5D
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Technologia mikroczipu
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VS-60EPF04-M3 |
DIODE GP 400V 60A TO247AC
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Vishay General Semiconductor - Diody
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RURG8060 |
DIODE GEN PURP 600V 80A TO247-2
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ONSEM
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RURG80100 |
DIODE GEN PURP 1KV 80A TO247-2
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ONSEM
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RHRG5060 |
DIODA GEN PURP 600V 50A TO247-2
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ONSEM
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MBRB40250TG |
DIODE SCHOTTKY 250V 40A D2PAK
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ONSEM
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RHRP3060 |
DIODE GEN PURP 600V 30A TO220-2L
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ONSEM
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RHRP30120 |
DIODA GP 1,2KV 30A TO220-2L
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ONSEM
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LXA15T600 |
DIODA GEN PURP 600V 15A TO220AC
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Integracja mocy
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RHRP8120 |
DIODE GEN PURP 1.2KV 8A TO220-2L
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ONSEM
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BZD27C24P |
SUB SMA, 1000MW, 6%, ZENER DIODE
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Tajwańska firma półprzewodnikowa
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CA3046 |
CA3046 - GENERAL PURPOSE NPN TRA
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Rochester Electronics, LLC
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BAS716 |
DIODE, LOW LEAKAGE, 200MA, 75V,
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Półprzewodnik Good-Ark
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DE150-501N04A |
RF MOSFET N-CHANNEL DE150
|
IXYS-RF
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DE475-102N21A |
RF MOSFET N-CHANNEL DE475
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IXYS-RF
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DE375-102N12A |
RF MOSFET N-CHANNEL DE375
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IXYS-RF
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DE275-102N06A |
RF MOSFET N-CHANNEL DE275
|
IXYS-RF
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IXTA4N150HV |
MOSFET N-CH 1500V 4A TO263
|
IXYS
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IXFH6N120P |
MOSFET N-CH 1200V 6A TO247AD
|
IXYS
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IXFN420N10T |
MOSFET N-CH 100V 420A SOT227B
|
IXYS
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IXFH50N85X |
MOSFET N-CH 850V 50A TO247
|
IXYS
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IXTQ22N50P |
MOSFET N-CH 500V 22A TO3P
|
IXYS
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IXTQ76N25T |
MOSFET N-CH 250V 76A TO3P
|
IXYS
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IXFN82N60P |
MOSFET N-CH 600V 72A SOT-227B
|
IXYS
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