SI1308EDL-T1-GE3
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 30V 1.4A SOT323
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Kategoria:
Dyskretne produkty półprzewodnikowe Tranzystory FET, MOSFET Pojedyncze FET, MOSFET
FET Feature:
-
Vgs(th) (Maks.) @ Id:
1,5 V przy 250 µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Opakowanie / Pudełko:
SC-70, SOT-323
Gate Charge (Qg) (Max) @ Vgs:
4.1 nC @ 10 V
Rds On (Max) @ Id, Vgs:
132 mOhm przy 1,4 A, 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
105 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-70-3
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Power Dissipation (Max):
400mW (Ta), 500mW (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1308
Wprowadzenie
N-kanał 30 V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Nawierzchnia SC-70-3
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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