Filtry
Filtry
Pamięć
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
|
IS64WV102416BLL-10MA3 |
SRAM 16M (1Mx16) 10ns asynchroniczna pamięć SRAM
|
ISSI
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IS61LV6416-8TL |
SRAM 1Mb 64Kx16 8ns Asynchroniczna SRAM 3,3v
|
ISSI
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IS61LV6416-10TL |
SRAM 1Mb 64Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
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24LC64-I/SN |
Układ scalony EEPROM 64K I2C 400KHZ 8SOIC
|
Technologia mikroczipu
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W25Q128JVSIM |
Układ scalony FLASH 128M SPI 133MHZ 8SOIC
|
Elektronika Winbonda
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MT40A512M8RH-083E:B |
IC DRAM 4G PARALLEL 78FBGA
|
Technologia Mikron
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IS61LV2568L-10T |
SRAM 2Mb 256Kx8 10ns Asynchroniczna SRAM 3,3v
|
ISSI
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IS63LV1024L-10TL-TR |
SRAM 1Mb 128Kx8 10ns 3,3V Asynchroniczna SRAM 3,3V
|
ISSI
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W631GG6KB-12 |
IC DRAM 1G RÓWNOLEGŁY 96WBGA
|
Elektronika Winbonda
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W9425G6KH-5 |
IC DRAM 256M RÓWNOLEGLE 66TSOP II
|
Elektronika Winbonda
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IS63LV1024L-10TL |
SRAM 1Mb 128Kx8 10ns 3,3V Asynchroniczna SRAM 3,3V
|
ISSI
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IS61LV6416-10BLI |
SRAM 1Mb 64Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
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IS63LV1024L-10TLI |
SRAM 1Mb 128Kx8 10ns Asynchroniczna SRAM 3,3v
|
ISSI
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IS61LV12816L-10TLI |
SRAM 2Mb 128Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
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IS61NLP51236-200B3LI |
SRAM 18Mb 512Kx36 200MHz Synchronizacja SRAM 3.3V
|
ISSI
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IS61LPS51236A-200TQLI |
SRAM 18Mb 512Kx36 200MHz Synchronizacja SRAM 3.3V
|
ISSI
|
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IS62WV10248DBLL-55TLI |
SRAM 8M (1MX8) 55NS Async SRAM
|
ISSI
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W25X40CLSNIG |
Układ scalony FLASH 4M SPI 104MHZ 8SOIC
|
Elektronika Winbonda
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W25Q64JVSSIQ |
Układ scalony FLASH 64M SPI 133MHZ 8SOIC
|
Elektronika Winbonda
|
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CAT24C04WI-GT3 |
Układ scalony EEPROM 4K I2C 400KHZ 8SOIC
|
ONSEM
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W9825G6KH-6 |
IC DRAM 256M RÓWNOLEGLE 54TSOP
|
Elektronika Winbonda
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W9751G6KB25I |
Układ scalony DRAM 512M RÓWNOLEGŁY 84WBGA
|
Elektronika Winbonda
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MT25QL256ABA8ESF-0SIT |
Układ scalony FLASH 256M SPI 133MHZ 16SOP2
|
Technologia Mikron
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M29W160EB70N6E |
IC FLASH 16M PARALLEL 48TSOP
|
Technologia Mikron
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M29W320EB70N6E |
IC FLASH 32M RÓWNOLEGLE 48TSOP
|
Technologia Mikron
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MT25QL128ABA1EW7-0SIT |
IC FLASH 128M SPI 133MHZ 8WPDFN
|
Technologia Mikron
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MT48LC4M32B2TG-7:G |
IC DRAM 128M RÓWNOLEGLE 86TSOP II
|
Technologia Mikron
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M25P64-VMF6P |
Układ scalony FLASH 64M SPI 50MHZ 16SO W
|
Technologia Mikron
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W9751G6KB-18 |
Układ scalony DRAM 512M RÓWNOLEGŁY 84WBGA
|
Elektronika Winbonda
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JS28F640J3D75A |
IC FLASH 64M RÓWNOLEGLE 56TSOP
|
Technologia Mikron
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JS28F128J3D75A |
IC FLASH 128M RÓWNOLEGLE 56TSOP
|
Technologia Mikron
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M25P16-VMN6TP |
Układ scalony FLASH 16M SPI 75MHZ 8SO
|
Technologia Mikron
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M25P40-VMN6TPB |
Układ scalony FLASH 4M SPI 75MHZ 8SO
|
Technologia Mikron
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IS66WVE4M16ALL-70BLI |
SRAM 64Mb 70ns1,7-1,95v 4M x 16 Pseudo SRAM
|
ISSI
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MT29F32G08AFABAWP-IT:B |
IC FLASH 32G PARALLEL 48TSOP I
|
Technologia Mikron
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JS28F128P30BF75A |
IC FLASH 128M RÓWNOLEGLE 56TSOP
|
Technologia Mikron
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MT47H64M16HR-25E:H |
IC DRAM 1G RÓWNOLEGŁY 84FBGA
|
Technologia Mikron
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MT29F64G08CBABAWP:B |
IC FLASH 64G PARALLEL 48TSOP I
|
Technologia Mikron
|
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IS61LV12816L-10BI |
SRAM 2Mb 128Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
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IS62WV25616BLL-55TI |
SRAM 4Mb 256Kx16 55ns Asynchroniczna pamięć SRAM
|
ISSI
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MT48LC32M16A2P-75:C |
IC DRAM 512M PARALLEL 54TSOP
|
Technologia Mikron
|
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IS61WV102416BLL-10MI |
SRAM 16m 3,3 V 10ns 1M x 16 Async SRAM
|
ISSI
|
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|
IS61LV6416-10TI |
SRAM 1Mb 64Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
|
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IS61LF51236A-7.5TQLI |
SRAM 18Mb 512Kx36 7,5ns Synchronizacja SRAM 3,3v
|
ISSI
|
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IS63LV1024L-10JLI |
SRAM 1Mb 128Kx8 10ns Asynchroniczna SRAM 3,3v
|
ISSI
|
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|
NAND128W3A2BN6E |
IC FLASH 128M PARALLEL 48TSOP
|
Technologia Mikron
|
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IS66WVH16M8ALL-166B1LI |
SRAM 128Mb 16Mbx8 1,8V 166MHz HyperRAM
|
ISSI
|
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IS61LV2568L-10TL |
SRAM 2Mb 256Kx8 10ns Asynchroniczna SRAM 3,3v
|
ISSI
|
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IS61LV6416-10TLI |
SRAM 1Mb 64Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
|
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IS61LV6416-10TLI-TR |
SRAM 1Mb 64Kx16 10ns Asynchroniczna SRAM 3,3V
|
ISSI
|
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