Filtry
Filtry
FET, MOSFET
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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SI7461DP-T1-GE3 |
MOSFET P-CH 60V 8,6A PPAK SO-8
|
Vishay Siliconix
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bss84 |
MOSFET P-CH 50V 130MA SOT23-3
|
ONSEM
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SI2319DDS-T1-GE3 |
MOSFET P-CH 40V 2,7A/3,6A SOT23
|
Vishay Siliconix
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BUK7M33-60EX |
MOSFET N-CH 60V 24A LFPAK33
|
Nexperia USA Inc.
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PMXB120EPEZ |
MOSFET P-CH 30V 2,4A DFN1010D-3
|
Nexperia USA Inc.
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PMV250EPEAR |
MOSFET P-CH 40V 1,5A TO236AB
|
Nexperia USA Inc.
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RK7002BMHZGT116 |
MOSFET N-CH 60V 250MA SST3
|
Półprzewodnik Rohma
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SI7461DP-T1-E3 |
MOSFET P-CH 60V 8,6A PPAK SO-8
|
Vishay Siliconix
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SI7137DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
Vishay Siliconix
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SI3458BDV-T1-GE3 |
MOSFET N-CH 60 V 4,1 A 6 TSOP
|
Vishay Siliconix
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PMV37ENEAR |
MOSFET N-CH 60V 3,5A TO236AB
|
Nexperia USA Inc.
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PMV40UN2R |
MOSFET N-CH 30V 3,7A TO236AB
|
Nexperia USA Inc.
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PMV20ENR |
MOSFET N-CH 30V 6A TO236AB
|
Nexperia USA Inc.
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DMG1013T-7 |
MOSFET P-CH 20V 460MA SOT523
|
Diody wbudowane
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MRF8P20140WHSR3 |
FET RF 2CH 65V 1,91GHZ NI780S-4
|
NXP USA Inc.
|
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MRF8P9040NR1 |
RF MOSFET LDMOS DL 28V TO272-4
|
NXP USA Inc.
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MRF9045LR1 |
FET RF 65V 945MHZ NI-360
|
NXP USA Inc.
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MRF6S19100HR3 |
FET RF 68 V 1,99 GHz NI-780
|
NXP USA Inc.
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MRF7S15100HR3 |
FET RF 65 V 1,51 GHz NI780
|
NXP USA Inc.
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MRFE6S9130HR3 |
FET RF 66V 880MHZ NI-780
|
NXP USA Inc.
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MMBF4416 |
MOSFET RF N-CH JFET 15 V SOT23-3
|
ONSEM
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MRF282ZR1 |
FET RF 65V 2GHZ NI-200Z
|
NXP USA Inc.
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MRF6VP3450HR6 |
FET RF 2CH 110V 860MHZ NI-1230
|
NXP USA Inc.
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MRF6V2300NR1 |
FET RF 110V 220MHZ TO-270-4
|
NXP USA Inc.
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MRF1517NT1 |
FET RF 25V 520MHZ PLD-1.5
|
NXP USA Inc.
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MRF1513NT1 |
FET RF 40V 520MHZ PLD-1.5
|
NXP USA Inc.
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PD84001 |
FET RF 18 V 870 MHz
|
STMikroelektronika
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PD85004 |
FET RF 40V 870MHZ
|
STMikroelektronika
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MRF1511NT1 |
FET RF 40V 175MHZ PLD-1.5
|
NXP USA Inc.
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MRFE6S9045NR1 |
FET RF 66V 880MHZ TO-270-2
|
NXP USA Inc.
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MRF1518NT1 |
FET RF 40V 520MHZ PLD-1.5
|
NXP USA Inc.
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MRF8P29300HR6 |
FET RF 2CH 65V 2.9GHZ NI1230
|
NXP USA Inc.
|
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DU28200M |
TRANZYSTOR MOSFET,200W,28V,2-175
|
Rozwiązania technologiczne MACOM
|
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NE3515S02-T1C-A |
SUPER NISKI poziom hałasu PSEUDOMORFIC HJ
|
CEL
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PD55003-E |
FET RF 40V 500MHZ PWRSO10
|
STMikroelektronika
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MRFE6VP61K25HR5 |
FET RF 2CH 133V 230MHZ NI-1230
|
NXP USA Inc.
|
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VRF2933MP |
RF MOSFET N-KANAŁ 50 V M177
|
Technologia mikroczipu
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VRF151 |
MOSFET RF PWR N-CH 50V 150W M174
|
Technologia mikroczipu
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MRFE6VP5600HR6 |
FET RF 2CH 130V 230MHZ NI1230
|
NXP USA Inc.
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MW6S010NR1 |
FET RF 68V 960MHZ TO270-2
|
NXP USA Inc.
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MRF6VP3450HR5 |
FET RF 2CH 110V 860MHZ NI-1230
|
NXP USA Inc.
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AFT09MS031NR1 |
FET RF 40V 870MHZ TO-270-2
|
NXP USA Inc.
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MRFE6VP100HR5 |
RF MOSFET LDMOS 50V NI780-4
|
NXP USA Inc.
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MRFE6S9060NR1 |
FET RF 66V 880MHZ TO270-2
|
NXP USA Inc.
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ARF460AG |
FET RF N-CH 500V 14A TO247
|
Technologia mikroczipu
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AFT27S006NT1 |
MOSFET RF LDMOS 28 V PLD1,5 W
|
NXP USA Inc.
|
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MRFE6VP6300HR5 |
FET RF 2CH 130V 230MHZ NI780-4
|
NXP USA Inc.
|
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PD55003L-E |
TRANZYSTOR RF 5X5 POWERFLAT
|
STMikroelektronika
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AFT27S010NT1 |
FET RF NCH 65 V 2700 MHZ PLD1,5 W
|
NXP USA Inc.
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PD55003TR-E |
FET RF 40V 500MHZ PWRSO-10
|
STMikroelektronika
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