Filtry
Filtry
Pamięć
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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K4B2G1646F-BCK0 |
96FBGA bezołowiowy i bezhalogenowy
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Półprzewodnik Samsung
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K4H511638J-LCCC |
Specyfikacja pamięci DDR SDRAM 512Mb typu C
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Półprzewodnik Samsung
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K9F1G08U0E-SCB0 |
Pamięć flash NAND 1 Gb
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Półprzewodnik Samsung
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K4W1G1646E-HC12 |
Pamięć graficzna
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Półprzewodnik Samsung
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K4T1G084QF-BCF7 |
1 GB pamięci F-die DDR2 SDRAM
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Półprzewodnik Samsung
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K4B4G1646D-BCMA |
4Gb B-die DDR3 SDRAM Tylko x16
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Półprzewodnik Samsung
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MT48LC16M16A2P-6A:G |
IC DRAM 256M RÓWNOLEGLE 54TSOP
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Technologia Mikron
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MT48LC8M16A2B4-6A:L |
IC DRAM 128M RÓWNOLEGŁY 54VFBGA
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Technologia Mikron
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MT48LC8M16A2P-6A:L |
IC DRAM 128M RÓWNOLEGLE 54TSOP
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Technologia Mikron
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MT2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M |
IC DRAM 4G RÓWNOLEGŁY 96FBGA
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Technologia Mikron
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MTFC4GLGDQ-AIT |
IC FLASH 32G MMC 100LBGA
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Technologia Mikron
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MT29F16G08ABACAWP-ITZ:C |
IC FLASH 16G RÓWNOLEGLE 48TSOP
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Technologia Mikron
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MT2S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S |
IC FLASH 1G PARALLEL 48TSOP
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Technologia Mikron
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JS28F256M29EWH |
IC FLASH 256M PARALLEL 56TSOP
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Technologia Mikron
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MT2K2K2K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K3K |
IC FLASH 4G RÓWNOLEGŁY 63VFBGA
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Technologia Mikron
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MT29F8G08ABACAWP-IT:C |
IC FLASH 8G PARALLEL 48TSOP I
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Technologia Mikron
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M29W128GH7AN6E |
IC FLASH 128M RÓWNOLEGLE 56TSOP
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Technologia Mikron
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MT41J128M16JT-093:K |
IC DRAM 2G PARALLEL 96FBGA
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Technologia Mikron
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MT41J256M16HA-093:E |
IC DRAM 4G RÓWNOLEGŁY 96FBGA
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Technologia Mikron
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N25Q032A13EF440E |
Układ scalony FLASH 32M SPI 108MHZ 8PDFN
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Technologia Mikron
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N25Q128A13EF740E |
Układ scalony FLASH 128M SPI 108MHZ 8VDFPN
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Technologia Mikron
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PC28F320J3F75A |
IC FLASH 32M PARALLEL 64EASYBGA
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Technologia Mikron
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MT48LC2M32B2P-6A:J |
IC DRAM 64M PARALLEL 86TSOP II
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Technologia Mikron
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MT48LC32M8A2P-6A:G |
IC DRAM 256M RÓWNOLEGLE 54TSOP
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Technologia Mikron
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MT48LC4M16A2P-6A:J |
IC DRAM 64M RÓWNOLEGLE 54TSOP
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Technologia Mikron
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W29N01GVSIA |
IC FLASH 1G PARALLEL 48TSOP
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Elektronika Winbonda
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W25Q16CLSSIG |
Układ scalony FLASH 16M SPI 50MHZ 8SOIC
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Elektronika Winbonda
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W25Q32FVSSIQ |
Układ scalony FLASH 32M SPI 104MHZ 8SOIC
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Elektronika Winbonda
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W25Q128FVPIQ |
Układ scalony FLASH 128M SPI 104MHZ 8WSON
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Elektronika Winbonda
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PC28F320J3F75E |
IC FLASH 32M PARALLEL 64EASYBGA
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Technologia Mikron
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M25P128-VMF6PB |
IC FLASH 128M SPI 54MHZ 16SO W
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Technologia Mikron
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MT47H32M16NF-25E:H |
Układ scalony DRAM 512M RÓWNOLEGŁY 84FBGA
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Technologia Mikron
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MT29F32G08CBACAWP-Z:C |
IC FLASH 32G PARALLEL 48TSOP I
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Technologia Mikron
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MT29F64G08CBAAAWP-Z:A |
IC FLASH 64G PARALLEL 48TSOP I
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Technologia Mikron
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N25Q256A81ESF40G |
Układ scalony FLASH 256M SPI 108MHZ 16SOP2
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Technologia Mikron
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EDW4032BABG-70-F-D |
IC RAM 4G PARALLEL 170FBGA
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Technologia Mikron
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W25Q128FVSIQ |
Układ scalony FLASH 128M SPI 104MHZ 8SOIC
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Elektronika Winbonda
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W25Q256FVEIQ |
Układ scalony FLASH 256M SPI 104MHZ 8WSON
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Elektronika Winbonda
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W25Q16DVSSIQ |
Układ scalony FLASH 16M SPI 104MHZ 8SOIC
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Elektronika Winbonda
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W25Q80BLUXIG |
Układ scalony FLASH 8M SPI 80MHZ 8USON
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Elektronika Winbonda
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MT41J256M16LY-091G:N |
IC DRAM 4G PARALLEL 1 GHz 96FBGA
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Technologia Mikron
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MT41K512M16HA-125:A |
DRAM 8G 1,35 V 512Mx16 800MHz DDR3 0C-90C
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Technologia Mikron
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MT4A256M16GE-075E:B |
IC DRAM 4G RÓWNOLEGŁY 96FBGA
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Technologia Mikron
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TC58NYG0S3HBAI6 |
EEPROM 1,8 V, 1 Gbit CMOS NAND EEPROM
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Toshiby
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TC58BVG0S3HTA00 |
EEPROM 3,3 V, 1 Gbit CMOS NAND EEPROM
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Toshiby
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TC58BVG2S0HTA00 |
EEPROM 3,3 V, 4 Gbit CMOS NAND EEPROM
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Toshiby
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TC58NVG1S3HTAI0 |
EEPROM 3,3 V, 2 Gbit CMOS NAND EEPROM
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Toshiby
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TC58NVG3S0FTA00 |
Pamięć Flash 8 Gb 3,3 V SLC NAND Pamięć Flash EEPROM
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Toshiby
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MT2W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3 |
IC FLASH 256G PARALLEL 83MHZ
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Technologia Mikron
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MT29RZ4B2DZZHHWD-18I.84F |
IC FLASH RAM 4G RÓWNOLEGŁY 533MHZ
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Technologia Mikron
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