PSMN1R0-30YLDX
producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 30V 100A LFPAK56
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Maks.) @ Id:
2,2 V przy 2 mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Opakowanie / Pudełko:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
121.35 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1,02 mOhm przy 25 A, 10 V
FET Type:
N-Channel
Napięcie napędu (maks. wł. wł., min wł. wł.):
4,5 V, 10 V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8598 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
238W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R0
Wprowadzenie
N-kanał 30 V 100A (Tc) 238W (Tc) Nawierzchnia LFPAK56, Power-SO8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
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