PSMN2R0-30PL,127
producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 30V 100A TO220AB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Temperatura pracy:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Ładunek bramki (Qg) (maks.) @ Vgs:
117 nC przy 10 V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 15A, 10V
Typ FET:
Kanał N
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6810 pF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
211W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN2R0
Wprowadzenie
N-kanał 30 V 100A (Tc) 211W (Tc) przez otwór TO-220AB
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
|
|
|
BUK9Y107-80EX |
MOSFET N-CH 80V 11.8A LFPAK56
|
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