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BUK7J1R4-40HX

producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 40V 190A LFPAK56
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
126 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
+20V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8155 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
LFPAK56; Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Power Dissipation (Max):
395W (Ta)
technologii:
MOSFET (tlenek metalu)
Base Product Number:
BUK7J1
Wprowadzenie
N-kanał 40 V 120A (Ta) 395W (Ta) Nawierzchnia LFPAK56; Moc-SO8
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