BUK7Y7R6-40EX
producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 40V 79A LFPAK56
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
26.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Napięcie od drenu do źródła (Vdss):
40 V
Vgs (Max):
±20V
Status produktu:
Aktywny
Input Capacitance (Ciss) (Max) @ Vds:
1650 pF @ 25 V
Rodzaj montażu:
Powierzchnia
Series:
Automotive, AEC-Q100, TrenchMOS™
Zestaw urządzeń dostawcy:
LFPAK56, moc-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)
Power Dissipation (Max):
94.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK7Y7
Wprowadzenie
N-kanał 40 V 79A (Tc) 94.3W (Tc) Nawierzchnia LFPAK56, Power-SO8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
|
|
|
BUK9Y107-80EX |
MOSFET N-CH 80V 11.8A LFPAK56
|
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