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BUK7Y8R7-60EX

producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 60V 87A LFPAK56
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Temperatura pracy:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3159 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q100, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
87A (Tc)
Power Dissipation (Max):
147W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK7Y8
Wprowadzenie
N-kanał 60 V 87A (Tc) 147W (Tc) Nawierzchnia LFPAK56, Power-SO8
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