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BST82,215

producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 100V 190MA TO236AB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Product Status:
Not For New Designs
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 10 V
Series:
TrenchMOS™
Vgs (Max):
±20V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Supplier Device Package:
TO-236AB
Rds On (Max) @ Id, Vgs:
10Ohm @ 150mA, 5V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-65°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
830mW (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
190mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BST82
Wprowadzenie
N-kanał 100 V 190mA (Ta) 830mW (Tc) Nawierzchnia TO-236AB
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