Filtry
Filtry
Pamięć
| Obraz | część # | Opis | producent | Akcje | RFQ | |
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IS43TR16640BL-107MBLI |
DRAM 1G, 1,35 V, DDR3L, 64 M x 16, 1866 MT/s @ 13-13-13, 96 kulek BGA (9 mm x 13 mm) RoHS, IT
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ISSI
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IS43TR16256A-125KBL |
DRAM 4G, 1,5 V, 1600 MHz DDR3 SDram
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ISSI
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IS43DR16128A-3DBLI |
Pamięć DRAM 2G 1,8 V DDR2 128 M x 16 333 MHz @ CL5 84 BGA
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ISSI
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IS41C16105C-50KLI |
DRAM 16M, 5V, 50ns 1Mx16 Szybka pamięć DRAM
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ISSI
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IS41LV16100C-50KLI |
DRAM 16M, 3,3V, 50ns 1Mx16 EDO DRAM Asynchroniczny
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ISSI
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IS43TR16640B-15GBLI |
DRAM 1G, 1,5 V, DDR3, 64 M x 16, 1333 MT/s @ 8-8-8, 96 kulek BGA (9 mm x 13 mm) RoHS, IT
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ISSI
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IS43TR16256A-15HBLI |
Pamięć DRAM 4G, 1,5 V, 1333 MHz DDR3 SDRAM
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ISSI
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IS46TR16256AL-125KBLA2 |
DRAM 4G, 1,35 V, 1600mt/s DDR3 SDram
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ISSI
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IS43TR16640B-125JBLI-TR |
DRAM 1G, 1,5 V, DDR3, 64 M x 16, 1600 MT/s @ 10-10-10, 96 kulek BGA (9 mm x 13 mm) RoHS, IT, T&R
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ISSI
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IS46TR16256A-15HBLA2 |
Pamięć DRAM 4G, 1,5 V, 1333 MT/s DDR3 SDRAM
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ISSI
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IS43DR16128B-25EBL |
DRAM 2G, 1,8 V, DDR2, 128 M x 16, 400 MHz @ CL6, 84 kulki BGA (10,5 mm x 13,5 mm) RoHS
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ISSI
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IS43LR16320B-6BLI |
DRAM 512 m, 1,8 V, 166 MHz 32mx16 DDR Mobile
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ISSI
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IS43TR16128BL-125KBLI |
Pamięć DRAM 2G, 1,35 V, 1600 MT/s 128Mx16 DDR3L SDRAM
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ISSI
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IS43TR16640A-15GBL |
Pamięć DRAM 1G, 1,5 V, (64M x 16) 1300 MHz DDR3 SDRAM
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ISSI
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IS41LV16105C-50KLI |
DRAM 16M, 3,3V, 50ns 1Mx16 Szybka pamięć DRAM
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ISSI
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IS46TR16256A-15HBLA1 |
Pamięć DRAM 4G, 1,5 V, 1333 MT/s DDR3 SDRAM
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ISSI
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IS43TR16640A-15GBLI |
Pamięć DRAM 1G, 1,5 V, (64M x 16) 1300 MHz DDR3 SDRAM
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ISSI
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AT25SF041-SSHD-T |
Układ scalony FLASH 4M SPI 104MHZ 8SOIC
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Adesto Technologies
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MX25L12835FMI-10G |
Układ scalony FLASH 128M SPI 104MHZ 16SOP
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MXIC, Macronix
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MX25R2035FZUIL0 |
IC FLASH 2M SPI 33MHZ 8USON
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MXIC, Macronix
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MX30LF2G18AC-TI |
IC FLASH 2G RÓWNOLEGLE 48TSOP
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MXIC, Macronix
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M24C64-RMN6TP |
Układ scalony EEPROM 64K I2C 1MHZ 8SO
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STMikroelektronika
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MX30LF1G18AC-TI |
IC FLASH 1G PARALLEL 48TSOP
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MXIC, Macronix
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MT41K512M8DA-107:P |
IC DRAM 4G PARALLEL 78FBGA
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Technologia Mikron
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MX29LV160DBTI-70G |
IC FLASH 16M PARALLEL 48TSOP
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MXIC, Macronix
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MT41K64M16TW-107:J |
IC DRAM 1G PARALLEL 96FBGA
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Technologia Mikron
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M24C64-RDW6TP |
Układ scalony EEPROM 64K I2C 1MHZ 8TSSOP
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STMikroelektronika
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MX68GL1G0GHT2I-10G |
IC FLASH 1 GBIT
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MXIC, Macronix
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AT21CS01-MSHMHU-T |
EEPROM SEEPROM, 1K, SW - 1,7-3,6V, 125Kbps, Ind Tmp, 2-XSFN
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Atmel / Technologia mikrochipów
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NT1przewodnik |
Komercyjne, przemysłowe i samochodowe DDR3(L) 1 Gb SDRAM
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Technologia Nanya
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SST39VF040-70-4C-NHE |
Pamięć Flash 4M (512Kx8) 70ns 2,7-3,6V Komercyjna
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Technologia mikroczipu
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S29GL064S70TFI010 |
Pamięć Flash 64 Mb, 3,0 V, równoległa pamięć NOR Flash
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Cyprysowy półprzewodnik
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