IXFP7N100P
producent:
IXYS
Opis:
MOSFET N-CH 1000V 7A TO220AB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
6V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Opakowanie / Pudełko:
DO-220-3
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1,9 oma przy 3,5 A, 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2590 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP7N100
Wprowadzenie
N-kanał 1000 V 7A (Tc) 300W (Tc) przez otwór TO-220-3
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| Obraz | część # | Opis | |
|---|---|---|---|
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|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
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|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
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IXFN32N100Q3 |
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IXFN36N100 |
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|
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