IXFH24N80P
producent:
IXYS
Opis:
MOSFET N-CH 800V 24A TO247AD
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7200 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Power Dissipation (Max):
650W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH24
Wprowadzenie
N-kanał 800 V 24A (Tc) 650W (Tc) przez otwór TO-247AD (IXFH)
ZAŁĄCZONE PRODUKTY
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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