IXFB30N120P
producent:
IXYS
Opis:
MOSFET N-CH 1200V 30A PLUS264
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
310 nC @ 10 V
Rds On (Max) @ Id, Vgs:
350mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Pakiet:
Rurka
Drain to Source Voltage (Vdss):
1200 V
Vgs (maks.):
±20 V
Product Status:
Active
Pojemność wejściowa (Ciss) (maks.) @ Vds:
22500 pF przy 25 V
Mounting Type:
Through Hole
Zestaw:
HiPerFET™, Polar
Supplier Device Package:
PLUS264™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
1250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB30
Wprowadzenie
N-kanał 1200 V 30A (Tc) 1250W (Tc) przez otwór PLUS264TM
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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