IXFB150N65X2
producent:
IXYS
Opis:
MOSFET N-CH 650V 150A PLUS264
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
430 nC @ 10 V
Rds On (Max) @ Id, Vgs:
17mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
20400 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
PLUS264™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Rozpraszanie mocy (maks.):
1560 W (Tc)
Technology:
MOSFET (Metal Oxide)
Numer produktu podstawowego:
IXFB150
Wprowadzenie
N-kanał 650 V 150A (Tc) 1560W (Tc) przez otwór PLUS264TM
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IXFH13N50 |
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IXFN32N120P |
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