IXTH6N150
producent:
IXYS
Opis:
MOSFET N-CH 1500V 6A TO247
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Temperatura pracy:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Ładunek bramki (Qg) (maks.) @ Vgs:
67 nC przy 10 V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 500mA, 10V
Typ FET:
Kanał N
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2230 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
540W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH6
Wprowadzenie
N-kanał 1500 V 6A (Tc) 540W (Tc) przez otwór TO-247 (IXTH)
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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