IXFA90N20X3
producent:
IXYS
Opis:
MOSFET N-CH 200V 90A TO263AA
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
Rds On (Max) @ Id, Vgs:
12.8mOhm @ 45A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5420 pF @ 25 V
Mounting Type:
Surface Mount
Zestaw:
HiPerFET™, Ultra X3
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Rozpraszanie mocy (maks.):
390 W (Tc)
Technology:
MOSFET (Metal Oxide)
Numer produktu podstawowego:
IXFA90
Wprowadzenie
N-kanał 200 V 90A (Tc) 390W (Tc) Nawierzchnia TO-263AA (IXFA)
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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|
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|
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|
|
IXFH26N50Q |
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|
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
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IXFN36N100 |
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|
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