IXTT96N15P
producent:
IXYS
Opis:
MOSFET N-CH 150V 96A TO268
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Temperatura pracy:
-55°C ~ 175°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Ładunek bramki (Qg) (maks.) @ Vgs:
110 nC @ 10 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 500mA, 10V
Typ FET:
Kanał N
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3500 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Polar
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
96A (Tc)
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT96
Wprowadzenie
N-kanał 150 V 96A (Tc) 480W (Tc) Nawierzchnia TO-268AA
ZAŁĄCZONE PRODUKTY
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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