IXTY1R6N50D2
producent:
IXYS
Opis:
MOSFET N-CH 500V 1.6A TO252
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Kategoria:
Dyskretne produkty półprzewodnikowe Tranzystory FET, MOSFET Pojedyncze FET, MOSFET
FET Feature:
Depletion Mode
Vgs(th) (Maks.) @ Id:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Opakowanie / Pudełko:
TO-252-3, DPak (2 odprowadzenia + zakładka), SC-63
Gate Charge (Qg) (Max) @ Vgs:
23.7 nC @ 5 V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 800mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
645 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Depletion
Supplier Device Package:
TO-252AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTY1
Wprowadzenie
N-kanał 500 V 1.6A (Tc) 100W (Tc) Nawierzchnia TO-252AA
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IXFH12N90 |
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IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
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IXFN32N120P |
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IXFN32N100Q3 |
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|
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