FMY-1106S
producent:
Sanken Electric USA Inc.
Opis:
DIODE GEN PURP 600V 10A TO220F
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Obsolete
Current - Reverse Leakage @ Vr:
30 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.15 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220F-2L
Reverse Recovery Time (trr):
200 ns
Mfr:
Sanken Electric USA Inc.
Technology:
Standard
Temperatura robocza — złącze:
-40°C ~ 150°C
Package / Case:
TO-220-2 Full Pack
Napięcie — prąd stały wsteczny (Vr) (maks.):
600 V
Current - Average Rectified (Io):
10A
Prędkość:
Szybkie odzyskiwanie =< 500ns, > 200mA (Io)
Wprowadzenie
Dioda 600 V 10A przez otwór TO-220F-2L
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DIODE GEN PURP 200V 2A SJP
SJPB-H6VR
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FMD-G26S
DIODE GEN PURP 600V 10A TO220F
SARS01V1
DIODE GEN PURP 800V 1.2A AXIAL
SJPX-F2VR
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SARS05VL
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
SJPB-H9VL |
DIODE SCHOTTKY 90V 2A SJP
|
|
|
|
SJPL-H2VL |
DIODE GEN PURP 200V 2A SJP
|
|
|
|
SJPB-H6VR |
DIODE SCHOTTKY 60V 2A SJP
|
|
|
|
FMD-G26S |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
SARS01V1 |
DIODE GEN PURP 800V 1.2A AXIAL
|
|
|
|
SJPX-F2VR |
DIODE GEN PURP 200V 1.5A SJP
|
|
|
|
SARS05VL |
DIODE GEN PURP 800V 1A SMD
|
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