SJPB-H9VL
producent:
Sanken Electric USA Inc.
Opis:
DIODE SCHOTTKY 90V 2A SJP
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
200 µA @ 90 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
850 mV @ 2 A
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
SJP
Mfr:
Sanken Electric USA Inc.
Technology:
Schottky
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
2-SMD, J-Lead
Voltage - DC Reverse (Vr) (Max):
90 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Numer produktu podstawowego:
SJPB-H9
Wprowadzenie
Dioda 90 V 2A Nawierzchnia SJP
Related Products
FMY-1106S
DIODE GEN PURP 600V 10A TO220F
SJPL-H2VL
DIODE GEN PURP 200V 2A SJP
SJPB-H6VR
DIODE SCHOTTKY 60V 2A SJP
FMD-G26S
DIODE GEN PURP 600V 10A TO220F
SARS01V1
DIODE GEN PURP 800V 1.2A AXIAL
SJPX-F2VR
DIODE GEN PURP 200V 1.5A SJP
SARS05VL
DIODE GEN PURP 800V 1A SMD
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
FMY-1106S |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
SJPL-H2VL |
DIODE GEN PURP 200V 2A SJP
|
|
|
|
SJPB-H6VR |
DIODE SCHOTTKY 60V 2A SJP
|
|
|
|
FMD-G26S |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
SARS01V1 |
DIODE GEN PURP 800V 1.2A AXIAL
|
|
|
|
SJPX-F2VR |
DIODE GEN PURP 200V 1.5A SJP
|
|
|
|
SARS05VL |
DIODE GEN PURP 800V 1A SMD
|
Wyślij zapytanie ofertowe
Akcje:
MOQ: