Filtry
Filtry
Dyskretne półprzewodniki
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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FDME905PT |
MOSFET P-CH 12V 6-UMLP
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ONSEM
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FQD6N40CTM |
MOSFET N-CH 400V 4,5A DPAK
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ONSEM
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DMP4010SK3Q-13 |
MOSFET P-CH 40V 50A TO252
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Diody wbudowane
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FDD6685 |
MOSFET P-CH 30V 11A DPAK
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ONSEM
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FDD86113LZ |
MOSFET N-CH 100 V 4,2 A DPAK-3
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ONSEM
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IRFH7440TRPBF |
MOSFET N-CH 40V 85A 8PQFN
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Technologie Infineon
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FCD7N60TM |
MOSFET N-CH 600V 7A DPAK
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ONSEM
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FDB14N30TM |
MOSFET N-CH 300V 14A D2PAK
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ONSEM
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FQB22P10TM |
MOSFET P-CH 100V 22A D2PAK
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ONSEM
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IRFS7730TRL7PP |
MOSFET N-CH 75V 240A D2PAK
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Technologie Infineon
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DMN3300U-7 |
MOSFET N-CH 30V 2A SOT23-3
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Diody wbudowane
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IRF200P222 |
MOSFET N-CH 200V 182A TO247AC
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Technologie Infineon
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STB28NM50N |
MOSFET N-CH 500V 21A D2PAK
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STMikroelektronika
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IRLML0030TRPBF |
MOSFET N-CH 30V 5,3A SOT-23-3
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Technologie Infineon
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IRFS7430TRLPBF |
MOSFET N-CH 40V 409A D2PAK
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Technologie Infineon
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STD25NF20 |
MOSFET N-CH 200V 18A DPAK
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STMikroelektronika
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IRFR15N20DTRBF |
MOSFET N-CH 200V 17A DPAK
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Technologie Infineon
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IPB031N08N5ATMA1 |
MOSFET N-CH 80V TO263-3
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Technologie Infineon
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BSS131H6327XTSA1 |
MOSFET N-CH 240V 0,11A SOT23
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Technologie Infineon
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IRFR4620TRLPBF |
MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Technologie Infineon
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IRFH7085TRPBF |
MOSFET N-CH 60V 23A 6-PQFN
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Technologie Infineon
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STD2NK90ZT4 |
MOSFET N-CH 900V 2.1A DPAK
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STMikroelektronika
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IRFS7530TRL7PP |
MOSFET N CH 60V 240A D2PAK
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Technologie Infineon
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AUIRLR120NTRL |
MOSFET N-CH 100V 10A DPAK
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Technologie Infineon
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BSC0702LS |
MOSFET N-CH 8TDSON
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Technologie Infineon
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AUIRFR6215TRL |
MOSFET P-CH 150V 13A DPAK
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Technologie Infineon
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SI7390DP-T1-E3 |
MOSFET 30V 15A 1,8W
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Vishay półprzewodniki
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FDMA530PZ |
MOSFET -30V P-Ch PowerTrench MOSFET
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Półprzewodnik Fairchilda
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IPB35N10S3L-26 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
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Technologie Infineon
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BSZ034N04LS |
MOSFET ZRÓŻNICOWANY MOSFET
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Technologie Infineon
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IPD90P04P4L-04 |
MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2
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Technologie Infineon
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FQPF13N50C |
MOSFET 500 V N-Ch Q-FET zaawansowanej serii C
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Półprzewodnik Fairchilda
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FQA38N30 |
MOSFET 300 V z kanałem N QFET
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Półprzewodnik Fairchilda
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FQPF12N60C |
MOSFET 600 V N-Ch Q-FET zaawansowanej serii C
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ONSEM
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SPA11N80C3 |
MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
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Technologie Infineon
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FDB2532 |
MOSFET 150 V z kanałem N QFET Trench
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Półprzewodnik Fairchilda
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SPP17N80C3 |
MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
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Technologie Infineon
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IXFK40N90P |
MOSFET PolarHV HiPerFETs 500V-1.2Kv Czerwony Rds
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IXYS
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DMP2047UCB4-7 |
Tryb MOSFET P-Ch ENH FET -20V -6
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Diody wbudowane
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IXFN160N30T |
MOSFET ROWEK HIPERFET PWR MOSFET 300V 130A
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IXYS
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IXFP16N50P |
MOSFET 500V 16A
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IXYS
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IXTQ69N30P |
MOSFET 69 A, 300 V, 0,049 Rds
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IXYS
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PMZ320UPEYL |
MOSFET 30 V z kanałem P, MOSFET z kanałem P
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Nexperia
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IPB100N04S4-H2 |
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
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Technologie Infineon
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IXFK64N50P |
MOSFET 500V 64A
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IXYS
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IPP80N08S2L-07 |
MOSFET N-Ch 75V 80A TO220-3 OptiMOS
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Technologie Infineon
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Wymagania dotyczące: |
MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
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Technologie Infineon
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SI9407BDY-T1-E3 |
MOSFET 60 V 4,7 A 5,0 W 120 mohm przy 10 V
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Vishay półprzewodniki
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DMG4435SSS-13 |
MOSFET MOSFET, KANAŁ P
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Diody wbudowane
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IPLU300N04S4-R8 |
MOSFET N-KANAŁ 30/40V
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Technologie Infineon
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