BUK9Y25-60E,115
producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 60V 34A LFPAK56
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Kategoria:
Dyskretne produkty półprzewodnikowe Tranzystory FET, MOSFET Pojedyncze FET, MOSFET
FET Feature:
-
Vgs(th) (Maks.) @ Id:
2,1 V przy 1 mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Opakowanie / Pudełko:
SC-100, SOT-669
Ładunek bramki (Qg) (maks.) @ Vgs:
12 nC @ 5 V
Rds On (Max) @ Id, Vgs:
21.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Power Dissipation (Max):
65W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9Y25
Wprowadzenie
N-kanał 60 V 34A (Tc) 65W (Tc) Nawierzchnia LFPAK56, Power-SO8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
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