2SK3018T106
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Not For New Designs
Rodzaj montażu:
Powierzchnia
Vgs(th) (Maks.) @ Id:
1,5 V przy 100 µA
Pojemność wejściowa (Ciss) (maks.) @ Vds:
13 pF przy 5 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Supplier Device Package:
UMT3
Rds On (Max) @ Id, Vgs:
8Ohm @ 10mA, 4V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4V
Power Dissipation (Max):
200mW (Ta)
Package / Case:
SC-70, SOT-323
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SK3018
Wprowadzenie
N-kanał 30 V 100mA (Ta) 200mW (Ta) Nawierzchnia UMT3
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Obraz | część # | Opis | |
---|---|---|---|
![]() |
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
![]() |
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
![]() |
Odpowiedź: |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
Odpowiedź: |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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