R6042JNZ4C13
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
7V @ 5.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 15 V
Rds On (Max) @ Id, Vgs:
104mOhm @ 21A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (maks.):
±30 V
Product Status:
Active
Pojemność wejściowa (Ciss) (maks.) @ Vds:
3500 pF przy 100 V
Mounting Type:
Through Hole
Zestaw:
-
Supplier Device Package:
TO-247G
Mfr:
Półprzewodnik Rohma
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Power Dissipation (Max):
495W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6042
Wprowadzenie
N-kanał 600 V 42A (Tc) 495W (Tc) przez otwór TO-247G
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Obraz | część # | Opis | |
---|---|---|---|
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RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
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RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
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Odpowiedź: |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
Odpowiedź: |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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