Odpowiedź:
producent:
Półprzewodnik Rohma
Opis:
MOSFET P-CH 30V 2.5A TSMT3
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
-
Temperatura pracy:
150°C (TJ)
Package / Case:
SC-96
Ładunek bramki (Qg) (maks.) @ Vgs:
5,4 nC przy 5 V
Rds On (Max) @ Id, Vgs:
98mOhm @ 2.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
460 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT3
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RSR025
Wprowadzenie
P-kanał 30 V 2,5 A (Ta) 1 W (Ta) Nawierzchnia TSMT3
ZAŁĄCZONE PRODUKTY
RSD050N10TL
MOSFET N-CH 100V 5A CPT3
RRR040P03TL
MOSFET P-CH 30V 4A TSMT3
RS1L120GNTB
MOSFET N-CH 60V 12A/36A 8HSOP
RUM003N02T2L
MOSFET N-CH 20V 300MA VMT3
RD3P130SPTL1
MOSFET P-CH 100V 13A TO252
RD3H200SNTL1
MOSFET N-CH 45V 20A TO252
Odpowiedź:
NCH 45V 2.5A SMALL SIGNAL MOSFET
RD3P050SNTL1
MOSFET N-CH 100V 5A TO252
RQ3E100ATTB
MOSFET P-CH 30V 10A/31A 8HSMT
RV2C010UNT2L
MOSFET N-CH 20V 1A DFN1006-3
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
|
|
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
|
|
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
|
|
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
|
|
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
|
|
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
|
|
Odpowiedź: |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
|
|
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
|
|
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
|
|
|
RV2C010UNT2L |
MOSFET N-CH 20V 1A DFN1006-3
|
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