BSH205G2R
producent:
Nexperia USA Inc.
Opis:
MOSFET P-CH 20V 2A TO236AB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Kategoria:
Dyskretne produkty półprzewodnikowe Tranzystory FET, MOSFET Pojedyncze FET, MOSFET
FET Feature:
-
Vgs(th) (Maks.) @ Id:
950 mV przy 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Opakowanie / Pudełko:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
6.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
170mOhm @ 2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
418 pF @ 10 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q100
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
480mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSH205
Wprowadzenie
P-kanał 20 V 2A (Ta) 480mW (Ta) Nawierzchnia TO-236AB
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E,115 |
MOSFET N-CH 100V 19A LFPAK56
|
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