SI7113ADN-T1-GE3
producent:
Vishay Siliconix
Opis:
MOSFET P-CH 100V 10.8A PPAK
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
132mOhm @ 3.8A, 10V
Typ FET:
Kanał P
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Pakiet:
Taśma i rolka (TR)
Taśma cięcia (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (maks.):
±20 V
Product Status:
Active
Pojemność wejściowa (Ciss) (maks.) @ Vds:
515 pF przy 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
10.8A (Tc)
Power Dissipation (Max):
27.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7113
Wprowadzenie
P-kanał 100 V 10,8 A (Tc) 27,8 W (Tc) Nawierzchnia PowerPAK® 1212-8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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