IRFP21N60LPBF
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 600V 21A TO247-3
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247AC
Mfr:
Vishay Siliconix
Prąd — ciągły drenaż (Id) przy 25°C:
21A (Tc)
Power Dissipation (Max):
330W (Tc)
technologii:
MOSFET (tlenek metalu)
Base Product Number:
IRFP21
Wprowadzenie
N-kanał 600 V 21A (Tc) 330W (Tc) przez otwór TO-247AC
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AUTOMOTIVE N-CHANNEL 100 V (D-S)
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
|
|
|
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
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