SI7431DP-T1-GE3
producent:
Vishay Siliconix
Opis:
MOSFET P-CH 200V 2.2A PPAK SO-8
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Ładunek bramki (Qg) (maks.) @ Vgs:
135 nC przy 10 V
FET Feature:
-
Status produktu:
Aktywny
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
174mOhm @ 3.8A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
1.9W (Ta)
Package / Case:
PowerPAK® SO-8
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7431
Wprowadzenie
P-kanał 200 V 2,2 A (Ta) 1,9 W (Ta) Nawierzchnia PowerPAK® SO-8
ZAŁĄCZONE PRODUKTY
2N7002E-T1-E3
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MOSFET N-CH 150V 53.7A PPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
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SIR880ADP-T1-GE3
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SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
SIJ478DP-T1-GE3
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SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
SISA72DN-T1-GE3
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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