SIR826DP-T1-GE3
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 80V 60A PPAK SO-8
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Ładunek bramki (Qg) (maks.) @ Vgs:
90 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 20A, 10V
Typ FET:
Kanał N
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Pakiet:
Taśma i rolka (TR)
Taśma cięcia (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
80 V
Vgs (maks.):
±20 V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 40 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
6.25W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR826
Wprowadzenie
N-kanał 80 V 60 A (Tc) 6,25 W (Ta), 104 W (Tc) Nawierzchnia PowerPAK® SO-8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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