IRL640STRLPBF
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 200V 17A D2PAK
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 5 V
Rds On (Max) @ Id, Vgs:
180 mOhm przy 10 A, 5 V
FET Type:
N-Channel
Napięcie napędu (maks. wł. wł., min wł. wł.):
4 V, 5 V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Napięcie od drenu do źródła (Vdss):
200 V
Vgs (Max):
±10V
Status produktu:
Aktywny
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
3.1W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRL640
Wprowadzenie
N-kanał 200 V 17A (Tc) 3.1W (Ta), 125W (Tc) Nawierzchnia D2PAK (TO-263)
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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