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SI5418DU-T1-GE3

producent:
Vishay Siliconix
Opis:
MOSFET N-CH 30V 12A PPAK
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® ChipFET™ Single
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 7.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® ChipFET™ Single
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
3.1W (Ta), 31W (Tc)
technologii:
MOSFET (tlenek metalu)
Base Product Number:
SI5418
Wprowadzenie
N-kanał 30 V 12A (Tc) 3,1 W (Ta), 31 W (Tc) Nawierzchnia PowerPAK® ChipFETTM Single
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