SISA12ADN-T1-GE3
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 30V 25A PPAK1212-8
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2070 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Zestaw urządzeń dostawcy:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Prąd — ciągły drenaż (Id) przy 25°C:
25A (Tc)
Power Dissipation (Max):
3.5W (Ta), 28W (Tc)
technologii:
MOSFET (tlenek metalu)
Base Product Number:
SISA12
Wprowadzenie
N-kanał 30 V 25A (Tc) 3,5 W (Ta), 28 W (Tc) Nawierzchnia PowerPAK® 1212-8
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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