SI4896DY-T1-E3
producent:
Vishay Siliconix
Opis:
MOSFET N-CH 80V 6.7A 8SO
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Ładunek bramki (Qg) (maks.) @ Vgs:
41 nC przy 10 V
FET Feature:
-
Status produktu:
Aktywny
Mounting Type:
Surface Mount
Pakiet:
Taśma i rolka (TR)
Taśma cięcia (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 250µA (Min)
Supplier Device Package:
8-SOIC
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 10A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
1.56W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
6.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4896
Wprowadzenie
N-kanał 80 V 6.7A (Ta) 1.56W (Ta) Nawierzchnia 8-SOIC
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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