FCPF16N60NT
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
52.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
199mOhm @ 8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (maks.):
±30 V
Product Status:
Obsolete
Pojemność wejściowa (Ciss) (maks.) @ Vds:
2170 pF przy 100 V
Mounting Type:
Through Hole
Zestaw:
SupreMOS™
Supplier Device Package:
TO-220F-3
Mfr:
ONSEM
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Power Dissipation (Max):
35.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCPF16
Wprowadzenie
N-kanał 600 V 16A (Tc) 35.7W (Tc) przez otwór TO-220F-3
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