FQB34N20LTM
producent:
ONSEM
Opis:
MOSFET N-CH 200V 31A D2PAK
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 5 V
Rds On (Max) @ Id, Vgs:
75mOhm @ 15.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Power Dissipation (Max):
3.13W (Ta), 180W (Tc)
Technology:
MOSFET (Metal Oxide)
Numer produktu podstawowego:
FQB34N20
Wprowadzenie
N-kanał 200 V 31A (Tc) 3.13W (Ta), 180W (Tc) Nawierzchnia D2PAK (TO-263)
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