FDS6690A
producent:
ONSEM
Opis:
MOSFET N-CH 30V 11A 8SOIC
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 5 V
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1205 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Numer produktu podstawowego:
FDS6690
Wprowadzenie
N-kanał 30 V 11A (Ta) 2,5 W (Ta) Nawierzchnia 8-SOIC
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