DMN2009LSS-13
producent:
Diody wbudowane
Opis:
MOSFET N-CH 20V 12A 8SOP
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Ładunek bramki (Qg) (maks.) @ Vgs:
58,3 nC przy 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 12A, 10V
Typ FET:
Kanał N
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Pakiet:
Taśma i rolka (TR)
Taśma cięcia (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (maks.):
±12 V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2555 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SO
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN2009
Wprowadzenie
N-kanał 20 V 12A (Ta) 2W (Ta) Nawierzchnia 8-SO
ZAŁĄCZONE PRODUKTY
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
DMP4015SPSQ-13
MOSFET P-CH 40V 8.5A PWRDI5060-8
ZXMP6A13FTA
MOSFET P-CH 60V 900MA SOT23-3
DMG301NU-7
MOSFET N-CH 25V 260MA SOT23
DMTH6016LPSQ-13
MOSFET N-CHA 60V 10.6A POWERDI
ZXMN6A07FTA
MOSFET N-CH 60V 1.2A SOT23-3
ZXMP6A17GTA
MOSFET P-CH 60V 3A SOT223
ZXMP6A17E6TA
MOSFET P-CH 60V 2.3A SOT26
DMP3010LK3-13
MOSFET P-CH 30V 17A TO252-3
DMP2165UW-7
MOSFET P-CH 20V 2.5A SOT323 T&R
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
DMTH43M8LFGQ-13 |
MOSFET N-CH 40V PWRDI3333
|
|
|
|
DMP4015SPSQ-13 |
MOSFET P-CH 40V 8.5A PWRDI5060-8
|
|
|
|
ZXMP6A13FTA |
MOSFET P-CH 60V 900MA SOT23-3
|
|
|
|
DMG301NU-7 |
MOSFET N-CH 25V 260MA SOT23
|
|
|
|
DMTH6016LPSQ-13 |
MOSFET N-CHA 60V 10.6A POWERDI
|
|
|
|
ZXMN6A07FTA |
MOSFET N-CH 60V 1.2A SOT23-3
|
|
|
|
ZXMP6A17GTA |
MOSFET P-CH 60V 3A SOT223
|
|
|
|
ZXMP6A17E6TA |
MOSFET P-CH 60V 2.3A SOT26
|
|
|
|
DMP3010LK3-13 |
MOSFET P-CH 30V 17A TO252-3
|
|
|
|
DMP2165UW-7 |
MOSFET P-CH 20V 2.5A SOT323 T&R
|
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