CZD25402Q3A
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.15V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
9.7 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 10A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1790 pF @ 10 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (3x3.15)
Mfr:
Instrumenty Teksasu
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Rozpraszanie mocy (maks.):
2,8 W (Ta), 69 W (Tc)
Technology:
MOSFET (Metal Oxide)
Numer produktu podstawowego:
CSD25402Q3
Wprowadzenie
P-kanał 20 V 76A (Tc) 2,8W (Ta), 69W (Tc) Nawierzchnia 8-VSONP (3x3.15)
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