NVMFS5113PLT1G
producent:
ONSEM
Opis:
MOSFET P-CH 60V 10A/64A 5DFN
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Funkcja FET:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Temperatura pracy:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Gate Charge (Qg) (Max) @ Vgs:
83 nC @ 10 V
Rds On (Max) @ Id, Vgs:
14mOhm @ 17A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4400 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 64A (Tc)
Power Dissipation (Max):
3.8W (Ta), 150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS5113
Wprowadzenie
P-kanał 60 V 10A (Ta), 64A (Tc) 3,8W (Ta), 150W (Tc) Nawierzchnia 5-DFN (5x6) (8-SOFL)
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