BAS116E6327HTSA1
producent:
Technologie Infineon
Opis:
DIODE GEN PURP 80V 250MA SOT23
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Supplier Device Package:
PG-SOT23
Reverse Recovery Time (trr):
1.5 µs
Mfr:
Infineon Technologies
Technology:
Standard
Operating Temperature - Junction:
150°C (Max)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Voltage - DC Reverse (Vr) (Max):
80 V
Current - Average Rectified (Io):
250mA
Prędkość:
Standardowe odzyskiwanie >500ns, >200mA (Io)
Base Product Number:
BAS116
Wprowadzenie
Dioda 80 V 250 mA Nawierzchnia PG-SOT23
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