VS-20ETS08S-M3
producent:
Vishay General Semiconductor - Diody
Opis:
DIODE GEN PURP 800V 20A TO263AB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 800 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 20 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-263AB (D²PAK)
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
20A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
20ETS08
Wprowadzenie
Dioda 800 V 20A na powierzchni TO-263AB (D2PAK)
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| Obraz | część # | Opis | |
|---|---|---|---|
|
|
VS-60EPF04-M3 |
DIODE GP 400V 60A TO247AC
|
|
|
|
MCL4448-TR |
DIODE GP 75V 150MA MICROMELF
|
|
|
|
VS-50WQ04FNTR-M3 |
DIODE SCHOTTKY 40V 5.5A DPAK
|
|
|
|
RS07J-GS18 |
DIODE GP 600V 500MA DO219AB
|
|
|
|
VS-150K30A |
DIODE GEN PURP 300V 150A DO205AA
|
|
|
|
B340A-E3/61T |
DIODE SCHOTTKY 40V 3A DO214AC
|
|
|
|
SL43-E3/57T |
DIODE SCHOTTKY 30V 4A DO214AB
|
|
|
|
SSC54-E3/9AT |
DIODE SCHOTTKY 40V 5A DO214AB
|
|
|
|
VS-10BQ100-M3/5BT |
DIODE SCHOTTKY 100V 1A DO214AA
|
|
|
|
SS36-E3/57T |
DIODE SCHOTTKY 60V 3A DO214AB
|
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