ER2J_R1_00001
producent:
Panjit International Inc.
Opis:
DIODE GEN PURP 600V 2A SMB
Kategoria:
Dyskretne produkty półprzewodnikowe
Specyfikacje
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 2 A
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
25pF @ 4V, 1MHz
Supplier Device Package:
SMB (DO-214AA)
Reverse Recovery Time (trr):
35 ns
Mfr:
Panjit International Inc.
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 150°C
Package / Case:
DO-214AA, SMB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
ER2J
Wprowadzenie
Dioda 600 V 2A na powierzchni SMB (DO-214AA)
ZAŁĄCZONE PRODUKTY
GS1010FL_R1_00001
DIODE GEN PURP 1KV 1A SOD123FL
Środki techniczne
DIODE SCHOTTKY 45V 10A TO277
SS10100FL_R1_00001
DIODE SCHOTTKY 100V 1A SOD123FL
ES1J_R1_00001
DIODE GEN PURP 600V 1A SMA
SS1040FL_R1_00001
DIODE SCHOTTKY 40V 1A SOD123FL
ES1006FL_R1_00001
DIODE GEN PURP 600V 1A SOD123FL
1N4148WS_R1_00001
DIODE GEN PURP 75V 200MA SOD323
GS1M_R1_00001
DIODE GEN PURP 1KV 1A SMA
SK26_R1_00001
DIODE SCHOTTKY 60V 2A SMB
SX34_R1_00001
DIODE SCHOTTKY 40V 3A SMA
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
GS1010FL_R1_00001 |
DIODE GEN PURP 1KV 1A SOD123FL
|
|
|
|
Środki techniczne |
DIODE SCHOTTKY 45V 10A TO277
|
|
|
|
SS10100FL_R1_00001 |
DIODE SCHOTTKY 100V 1A SOD123FL
|
|
|
|
ES1J_R1_00001 |
DIODE GEN PURP 600V 1A SMA
|
|
|
|
SS1040FL_R1_00001 |
DIODE SCHOTTKY 40V 1A SOD123FL
|
|
|
|
ES1006FL_R1_00001 |
DIODE GEN PURP 600V 1A SOD123FL
|
|
|
|
1N4148WS_R1_00001 |
DIODE GEN PURP 75V 200MA SOD323
|
|
|
|
GS1M_R1_00001 |
DIODE GEN PURP 1KV 1A SMA
|
|
|
|
SK26_R1_00001 |
DIODE SCHOTTKY 60V 2A SMB
|
|
|
|
SX34_R1_00001 |
DIODE SCHOTTKY 40V 3A SMA
|
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