K4B4G1646B-HYK0
producent:
Półprzewodnik Samsung
Kategoria:
Półprzewodniki
Specyfikacje
Pakiet:
BGA
Kategoria produktu:
półprzewodniki – układy scalone – układy scalone
Producent:
Półprzewodnik Samsunga
Wprowadzenie
K4B4G1646B-HYK0, od Samsung Semiconductor, to półprzewodniki-Środki Zintegrowane - IC. co oferujemy mają konkurencyjną cenę na rynku globalnym, które są w oryginalnych i nowych części.Jeśli chcesz wiedzieć więcej o produktach lub skorzystać z niższej ceny, skontaktuj się z nami za pośrednictwem online chatu lub wyślij nam ofertę!
ZAŁĄCZONE PRODUKTY
K4S561632H-UC75
SDRAM Product Guide
K4S511632D-UC75
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4T1G164QE-HCF8
1Gb E-die DDR2 SDRAM
K9F1G08U0B-PCB0
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F5608U0D-PIB0
32M x 8 Bit NAND Flash Memory
K4S561632N-LC75
K9F1G08U0D-SCB0
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9WBG08U1M-PIB0
K9WAG08U1A-PIB0
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9F2G08U0C-SIB0
2Gb C-die NAND Flash
K9F2G08U0C-SCB0
2Gb C-die NAND Flash
S3C4530A01-QE80
16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller
S3C2440AL-40
16/32-bit RISC microprocessor
K5L2731CAA-D770
K4S641632N-LC60
1M x 16Bit x 4 Banks Synchronous DRAM
K4E6E304EE-EGCE
K4B4G1646D-BMK0
DDR3 SDRAM Memory
S3C2410AL-20
RISC MICROPROCESSOR
KMR310001M-B611
K4S561632E-UC75
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K9K8G08U0B-PCB0
K4G41325FC-HC03
K4T1G164QF-BCE7
1Gb F-die DDR2 SDRAM
K4T51163QI-HCE7
512Mb B-die DDR2 SDRAM
K4B1G1646G-BCK0
1Gb C-die DDR3 SDRAM Specification
K4S561632J-UC75
K9F1G08U0D-SIB0
1Gb NAND Flash
K9F1G08U0C-PCB0
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
| Obraz | część # | Opis | |
|---|---|---|---|
|
|
K4S561632H-UC75 |
SDRAM Product Guide
|
|
|
|
K4S511632D-UC75 |
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
|
|
|
K4T1G164QE-HCF8 |
1Gb E-die DDR2 SDRAM
|
|
|
|
K9F1G08U0B-PCB0 |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
|
|
|
K9F5608U0D-PIB0 |
32M x 8 Bit NAND Flash Memory
|
|
|
|
K4S561632N-LC75 |
|
|
|
|
K9F1G08U0D-SCB0 |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
|
|
|
K9WBG08U1M-PIB0 |
|
|
|
|
K9WAG08U1A-PIB0 |
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
|
|
|
|
K9F2G08U0C-SIB0 |
2Gb C-die NAND Flash
|
|
|
|
K9F2G08U0C-SCB0 |
2Gb C-die NAND Flash
|
|
|
|
S3C4530A01-QE80 |
16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller
|
|
|
|
S3C2440AL-40 |
16/32-bit RISC microprocessor
|
|
|
|
K5L2731CAA-D770 |
|
|
|
|
K4S641632N-LC60 |
1M x 16Bit x 4 Banks Synchronous DRAM
|
|
|
|
K4E6E304EE-EGCE |
|
|
|
|
K4B4G1646D-BMK0 |
DDR3 SDRAM Memory
|
|
|
|
S3C2410AL-20 |
RISC MICROPROCESSOR
|
|
|
|
KMR310001M-B611 |
|
|
|
|
K4S561632E-UC75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
|
|
|
|
K9K8G08U0B-PCB0 |
|
|
|
|
K4G41325FC-HC03 |
|
|
|
|
K4T1G164QF-BCE7 |
1Gb F-die DDR2 SDRAM
|
|
|
|
K4T51163QI-HCE7 |
512Mb B-die DDR2 SDRAM
|
|
|
|
K4B1G1646G-BCK0 |
1Gb C-die DDR3 SDRAM Specification
|
|
|
|
K4S561632J-UC75 |
|
|
|
|
K9F1G08U0D-SIB0 |
1Gb NAND Flash
|
|
|
|
K9F1G08U0C-PCB0 |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
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